We are pleased to announce that Photo electron Soul will deliver an invited talk and a contributed poster presentation at the 39th International Vacuum Nanoelectronics Conference (IVNC 2026), July 13–17, 2026, at the Hitachi Baba Memorial Hall in Kokubunji, Tokyo.
In the invited talk, we will present the concepts and practical applications of our proprietary solution, which uses GaN semiconductor photocathode-based electron-beam technology for semiconductor metrology and inspection.
Additionally, in the poster presentation, we will introduce “Robustness and Lifetime Performance of GaN Semiconductor Photocathodes,” providing empirical support for the practical viability of this solution.
■ Conference Overview
•Name: The 39th International Vacuum Nanoelectronics Conference (IVNC 2026)
•Dates: July 13 – 17, 2026
•Venue: Hitachi Baba Memorial Hall (Kokubunji, Tokyo)
■ Invited Talk Details
•Date & Time: July 14 (Tue), 2026, 9:55–10:20
•Title: GaN Photocathode-Based Photoelectron Beam for Semiconductor Metrology and Inspection: Concepts and Applications
•Speaker: Tomohiro Nishitani (Photo electron Soul Inc.)
■ Poster Presentation Details
•Date & Time: July 14 (Tue), 2026, 17:00–19:00
•Title: Robustness and Lifetime Performance of NEA-InGaN Photocathodes at Practical Current Densities for SEM Applications
•Authors: Atsushi Koizumi (Photo electron Soul Inc.)