Related Papers

Scanning electron microscope imaging by selective e-beaming using photoelectron beams from semiconductor photocathodes Tomohiro Nishitani, Yuta Arakawa, Shotaro Noda, Atsushi Koizumi, Daiki Sato, Haruka Shikano, Hokuto Iijima, Yoshio Honda, and Hiroshi Amano Journal of Vacuum Science & Technology B 40, 064203 (2022)
Time response measurement of pulsed electron beam from InGaN photocathode Daiki Sato, Haruka Shikano, Atsushi Koizumi, and Tomohiro Nishitani Journal of Vacuum Science & Technology B 40, 064204 (2022)
Dependence of electron emission current density on excitation power density from Cs/O-activated negative electron affinity InGaN photocathode Atsushi Koizumi, Daiki Sato, Haruka Shikano, Hokuto Iijima, and Tomohiro Nishitani Journal of Vacuum Science & Technology B 40, 062202 (2022)
Multiple electron beam generation from InGaN photocathode Daiki Sato, Haruka Shikano, Atsushi Koizumi, Tomohiro Nishitani, Yoshio Honda, and Hiroshi Amano Journal of Vacuum Science & Technology B 39, 062209 (2021); doi: 10.1116/6.0001272
Recovery of quantum efficiency on Cs/O-activated GaN and GaAs photocathodes by thermal annealing in vacuum Daiki Sato, Tomohiro Nishitani, Yoshio Honda, and Hiroshi Amano Journal of Vacuum Science & Technology B 38, 012603 (2020); doi: 10.1116/1.5120417
Optimization of InGaN thickness for high-quantum-efficiency Cs/O activated InGaN photocathode Daiki Sato, Anna Honda, Atsushi Koizumi, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano Journal of Vacuum Science & Technology B 38, 012603 (2020); doi: 10.1116/1.5120417
半導体フォトカソードの産業技術への展開を目指した研究開発と事業化, Development of semiconductor photocathode for industrial electron beam technology and its technology commercialization 西谷智博 会誌「放射線化学」第１０３号, pp.21-27 (2017)（ISSN 2188-0115）, Journal of Japanese Society of Radiation Chemistry
Observation of relaxation time of surface charge limit for InGaN NEA photocathodes Daiki Sato, Tomohiro Nishitani, Yoshio Honda and Hiroshi Amano Japanese Journal of Applied Physics, Volume 55, 05FH05 (2016)

Conference List

Multiple Electron-Beam Generation from InGaN Photocathode EIPBN2021,June1-4,2021,Online Daiki Sato
半導体フォトカソード電子源を特徴とする電子ビーム検査技術, Innovative inspection technology opened by photo electron beam from III-V semiconductors 応用物理学会2-4回合同極限ナノ造形・構造物性研究会、オンライン開催、2020年10月26 - 27日 Tomohiro Nishitani, Yoshio Honda, Masaaki Araidai, Hiroshi Amano, Masao Tabuchi, Akihiro Narita, Hidehiro Yasuda, Fumitaro Ishikawa, Takashi Meguro, Atsushi Koizumi, Daiki Sato, Anna Honda
Electron Beam Technology Innovation by Semiconductor Photocathodes and its Commercialization 第39 回電子材料シンポジウム、オンライン開催、2020年10月7日-10月9日 Tomohiro Nishitani, Yoshio Honda, Masaaki Araidai, Hiroshi Amano, Masao Tabuchi, Akihiro Narita, Hidehiro Yasuda, Fumitaro Ishikawa, Takashi Meguro, Atsushi Koizumi, Daiki Sato, Anna Honda
SEM imaging using photo-electron beam by semiconductor photocathode The 63th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN 2019). Minneapolis, Minnesota, May 28 - 31, 2019 Tomohiro Nishitani, Daiki Sato, Haruka Shikano, Tomoaki Kawamata, Atsushi Koizumi, Hokuto Iijima, Masao Tabuchi
Surface Functional Recovery with Anneal Treatment for GaN Photocathode The 63th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN 2019). Minneapolis, Minnesota, May 28 - 31, 2019 Daiki Sato, Tomohiro Nishitani, Yoshio Honda, and Hiroshi Amano