関連論文

Multiple electron beam generation from InGaN photocathodeDaiki Sato, Haruka Shikano, Atsushi Koizumi, Tomohiro Nishitani, Yoshio Honda, and Hiroshi AmanoJournal of Vacuum Science & Technology B 39, 062209 (2021); doi: 10.1116/6.0001272
Recovery of quantum efficiency on Cs/O-activated GaN and GaAs photocathodes by thermal annealing in vacuumDaiki Sato, Tomohiro Nishitani, Yoshio Honda, and Hiroshi AmanoJournal of Vacuum Science & Technology B 38, 012603 (2020); doi: 10.1116/1.5120417
Optimization of InGaN thickness for high-quantum-efficiency Cs/O activated InGaN photocathodeDaiki Sato, Anna Honda, Atsushi Koizumi, Tomohiro Nishitani, Yoshio Honda, Hiroshi AmanoMicroelectronic Engineering 223 (2020) 111229; doi: 10.1016/j.mee.2020.111229
半導体フォトカソードの産業技術への展開を目指した研究開発と事業化, Development of semiconductor photocathode for industrial electron beam technology and its technology commercialization西谷智博会誌「放射線化学」第103号, pp.21-27 (2017)(ISSN 2188-0115), Journal of Japanese Society of Radiation Chemistry
Observation of relaxation time of surface charge limit for InGaN NEA photocathodesDaiki Sato, Tomohiro Nishitani, Yoshio Honda and Hiroshi AmanoJapanese Journal of Applied Physics, Volume 55, 05FH05 (2016)