Clear TEM imaging of moving specimen
The essential solution of the issue is faster imaging than the thermal drift velocity.
Semiconductor photocathodes have the advantage of faster pulse electron beam than the thermal drift velocity.
Moreover semiconductor photocathode can also generate large current over 1mA.
TEM imaging of moving specimenby the direct and pulsed e-beam(motion velocity = 2um/s)
| Clear Image : Pulse e- beam from p-InGaN photocathode | Blurring Image : Direct current e- beam (Conventional technology) |
|---|---|
|
Beam peak current 2.1 uA Pulse width = 5 ms Interval = 100 ms Charge per frame 11 nC / frame |
Beam current 13nA Charge per frame 13 nC / frame |
| Accelerating voltage | Tunable up to -1kV |
|---|---|
| Beam current | 4mA(current) |
| Emission size | Φ20mm |
| Dimensions | 650×550×135 |
| Weight | 36kg |
