Photo electron Soul Inc. will present four papers showcasing its latest research, including one oral presentation and three poster presentations, at SPIE Advanced Lithography + Patterning 2026, to be held in the United States.
This conference is one of the world’s leading international forums covering advanced semiconductor processes, lithography, and metrology and inspection technologies. Through these presentations, Photo electron Soul will highlight the new capabilities enabled by photocathode-based electron beam technologies to a global audience.
■ Conference Information
•Conference: SPIE Advanced Lithography + Patterning 2026
•Dates: February 22–26, 2026
•Location: San Jose, California, USA
■ Presentations
Oral Presentation (1)
Photocathode SEM with pixel current modulation for improved imaging of charge-sensitive materials and structures
Presenter: Tomohiro Nishitani (Photo electron Soul Inc.)
Poster Presentations (3)
Non-contact ON/OFF switching of nMOS and pMOS transistors by voltage-contrast photocathode SEM
Presenter: Daiki Sato (Photo electron Soul Inc.)
Characterization of MOSFET gate threshold behavior under varying drain electron conditions
Presenter: Daiki Sato (Photo electron Soul Inc.)
Charge suppression in SEM imaging using pulsed electron beam modulation from an NEA-InGaN semiconductor photocathode
Presenter: Mitsunobu Yasuda (Toray Research Center, Inc.)
Joint results of Toray Research Center, Inc. and Photo electron Soul Inc.
These presentations will provide valuable insights into advanced electron microscopy technologies and semiconductor device characterization, including non-contact electrical operation, charge suppression, secondary electron control, and enhanced SEM imaging performance.
Please refer to the official SPIE program for detailed presentation schedules and session information.