Related Papers

Photoelectron beam from semiconductor photocathodes leading to new inspection technologies. T. Nishitani, Y. Arakawa, K. Niimi, Y. Otsuka, D. Sato, A. Koizumi, H. Shikano, H. Iijima,Y. Honda, H. Amano Proc. of SPIE Vol. 12955 1295533-1~1295533-10(2024)
SEM imaging of high aspect ratio trench by selectively controlling the electron beam irradiation using photocathode Yuta Arakawa, Kotaro Niimi, Yohei Otsuka, Daiki Sato, Atsushi Koizumi, Haruka Shikano,Hokuto Iijima, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano Proc. of SPIE Vol. 12955 1295534-1~1295534-8(2024)
Local voltage contrast changes in MOSFET using scanning electron microscopy with photoelectron beam technology Daiki Sato, Yuta Arakawa, Kotaro Niimi, Keika Fukuroi, Yutaro Tajiri, Atsushi Koizumi,Haruka Shikano, Hokuto Iijima, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano Proc. of SPIE Vol. 12955 1295529-1~1295529-9(2024)
Photoelectron beam technology for SEM imaging with pixel-specific control of irradiation beam current T. Nishitani, Y. Arakawa, S. Noda, A. Koizumi, D. Sato, H. Shikano, H. Iijima, Y. Hondab,H. Amano Proc. of SPIE Vol. 12496 124962N-1~124962N-8(2023)
Novel Electron Beam Technology using InGaN Photocathode for High-Throughput Scanning Electron Microscope Imaging Daiki Sato, Atsushi Koizumi, Haruka Shikano, Shotaro Noda, Yohei Otsuka, Daisuke Yasufuku, Kazumasa Mori, Hokuto Iijima, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano Proc. of SPIE Vol. 12496 1249629-1~1249629-8(2023)
Investigation on Applying an InGaN Photocathode with Negative Electron Affinity for Electric Propulsion Yusuke INOUE, Tomohiro NISHITANI, Anna HONDA, Daiki SATO, Haruka SHIKANO, Atsushi KOIZUMI, Yoshio HONDA, Daisuke ICHIHARA, Akihiro SASOH Trans. Japan Soc. Aero. Space Sci. Vol. 66, No. 1, pp. 10–13, 2023
Scanning electron microscope imaging by selective e-beaming using photoelectron beams from semiconductor photocathodes Tomohiro Nishitani, Yuta Arakawa, Shotaro Noda, Atsushi Koizumi, Daiki Sato, Haruka Shikano, Hokuto Iijima, Yoshio Honda, and Hiroshi Amano Journal of Vacuum Science & Technology B 40, 064203 (2022)
Time response measurement of pulsed electron beam from InGaN photocathode Daiki Sato, Haruka Shikano, Atsushi Koizumi, and Tomohiro Nishitani Journal of Vacuum Science & Technology B 40, 064204 (2022)
Dependence of electron emission current density on excitation power density from Cs/O-activated negative electron affinity InGaN photocathode Atsushi Koizumi, Daiki Sato, Haruka Shikano, Hokuto Iijima, and Tomohiro Nishitani Journal of Vacuum Science & Technology B 40, 062202 (2022)
Multiple electron beam generation from InGaN photocathode Daiki Sato, Haruka Shikano, Atsushi Koizumi, Tomohiro Nishitani, Yoshio Honda, and Hiroshi Amano Journal of Vacuum Science & Technology B 39, 062209 (2021); doi: 10.1116/6.0001272
Recovery of quantum efficiency on Cs/O-activated GaN and GaAs photocathodes by thermal annealing in vacuum Daiki Sato, Tomohiro Nishitani, Yoshio Honda, and Hiroshi Amano Journal of Vacuum Science & Technology B 38, 012603 (2020); doi: 10.1116/1.5120417
Optimization of InGaN thickness for high-quantum-efficiency Cs/O activated InGaN photocathode Daiki Sato, Anna Honda, Atsushi Koizumi, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano Microelectronic Engineering 223 (2020) 111229; doi: 10.1016/j.mee.2020.111229
“Analysis of negative electron affinity InGaN photocathode by temperature-programed desorption method” Masahiro Kashima, Daiki Sato, Atsushi Koizumi, Tomohiro Nishitani, Yoshio Honda, Hiroshi Amano, Hokuto Iijima, and Takashi Meguro Journal of Vacuum Science & Technology B 36, 06JK02 (2018); doi: 10.1116/1.5048061
半導体フォトカソードの産業技術への展開を目指した研究開発と事業化, Development of semiconductor photocathode for industrial electron beam technology and its technology commercialization Tomohiro Nishitani 会誌「放射線化学」第１０３号, pp.21-27 (2017)（ISSN 2188-0115）, Journal of Japanese Society of Radiation Chemistry
Observation of relaxation time of surface charge limit for InGaN NEA photocathodes Daiki Sato, Tomohiro Nishitani, Yoshio Honda and Hiroshi Amano Japanese Journal of Applied Physics, Volume 55, 05FH05 (2016)
Photoemission lifetime of a negative electron affinity gallium nitride photocathode Tomohiro Nishitani, Masao Tabuchi, Hiroshi Amano, Takuya Maekawa, Makoto Kuwahara, and Takashi Meguro Journal of Vacuum Science & Technology B 32, 06F901 (5 pages) (2014); doi: 10.1116/1.4901566
In situ Observation of Formation Process of Negative Electron Affinity Surface of GaAs by Surface Photo-Absorption Kazuya Hayase, Tomohiro Nishitani, Katsunari Suzuki, Hironobu Imai, Jun-ichi Hasegawa, Daiki Namba, and Takashi Meguro Jpn. J. Appl. Phys. 52 (2013) 06GG05 (3 pages), DOI: 10.7567/JJAP.52.06GG05
GaN半導体型フォトカソードの量子効率の劣化現象と波長依存性 Kazuya Hayase, Tomohiro Nishitani, Takashi Meguro Quantum yield degradation　from　extraction　of　photocurrent　and　residual　gas　in　a　p-GaN　photocathode　with　an　NEA surface
The Electronic Journal Edition of IEEJ Transactions, Vol. 132 (2012) No. 8 P 1261-1264,doi:10.1541/ieejeiss.132.1261
Superlattice Photocathode for High Brightness and Long NEA-surface lifetime T. Nishitani, M. Tabuchi, K. Motoki, T. Takashima, A. Era, Y. Takeda Journal of Physics: Conference Series, 298, 012010, pp.1-5, (2011), doi:10.1088/1742-6596/298/1/012010
A study on XAFS analysis of Cs/GaAs NEA surface Atsushi Era, Masao Tabuchi, Tomohiro Nishitani, and Yoshikazu Takeda Journal of Physics: Conference Series, 298, 012012, pp.1-5, (2011), doi:10.1088/1742-6596/298/1/012012
A study of an electron affinity of cesium telluride thin film H Sugiyama, K Ogawa, J Azuma, K Takahashi, M Kamada, T Nishitani, M Tabuchi, T Motoki, K Takashima, A Era and Y Takeda Journal of Physics: Conference Series, 298, 012014, pp.1-6, (2011), doi:10.1088/1742-6596/298/1/012014
High Brightness Spin-Polarized Electron Source using Semiconductor Photocathodes Tomohiro Nishitani, Masao Tabuchi, Yoshikazu Takeda, Yuji Suzuki, Kazuya Motoki, Takashi Meguro Japanese Journal of Applied Physics 48 (2009) 06FF02, DOI: 10.1143/JJAP.48.06FF02
Superlattice Photocathode With High Brightness And Long NEA-surface Lifetime Tomohiro Nishitani, Masao Tabuchi, Yoshikazu Takeda, Yuji Suzuki, Kazuya Motoki, Takashi Meguro The American Institute of Physics: Conference Proceedings, Volume 1149, pp. 1047-1051, (2009), DOI: 10.1063/1.3215590
Photocathodes for the energy recovery linacs T. Rao, A. Burrill, X.Y. Chang, J. Smedley, T. Nishitani, C. Hernandez Garcia, M. Poelker, E. Seddon, F.E. Hannon, C.K. Sinclair, J. Lewellen, D. Feldman Nuclear Instruments and Methods in Physics Research A 557, pp.124–130, (2006)
Highly polarized electrons from GaAs-GaAsP and InGaAs-AlGaAs strained-layer superlattice photocathodes T. Nishitani, T. Nakanishi, M. Yamamoto, S. Okumi, F. Furuta, M. Miyamoto, M. Kuwahara, N. Yamamoto, K. Naniwa, O. Watanabe, Y. Takeda, H. Kobayakawa, Y. Takashima, H. Horinaka, T. Matsuyama, K. Togawa, T. Saka, M. Tawada, T. Omori, Y. Kurihara, M.Yoshioka,　K. Kato, T. Baba Journal of Applied Physics, 97, pp. 094907 1-6, (2005)
Surface photovoltage effect and its time dependence in GaAs-GaAsP superlattice studied with combination of synchrotron and laser radiation S. Tanaka, T. Nishitani, T. Nakanishi, S. D. Moré, J. Azuma, K. Takahashi, O. Watanabe, and M. Kamada Journal of Applied Physics, 95, 551 (2004)
High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source Tetsuya Matsuyama, Hisaya Takikita, Hiromichi Horinaka, Kenji Wada, Tsutomu Nakanishi, Shoji Okumi, Tomohiro Nishitani, Takashi Saka, and Toshihiro Kato Japanese Journal of Applied Physics, Part 1 43, 3371-3375 (2004)
200 keV Polarized Electron Source at Nagoya University K. Wada, M. Yamamoto, T. Nakanishi, S. Okumi, T. Gotoh, C. Suzuki, F. Furuta, T. Nishitani, M. Miyamoto, M. Kuwahara, T. Hirose, R. Mizuno, N. Yamamoto, H. Matsumoto, M. Yoshioka AIP Conference Proceedings, Volume 675, Issue 1, pp. 1063-1067 (2003)
Basic R&D Studies for Lower Emittance Polarized Electron Guns C. Suzuki, T. Nakanishi, S. Okumi, F. Furuta, K. Wada, T. Nishitani, M. Yamamoto, T. Hirose, M. Kuwahara, R. Mizuno, N. Yamamoto, H. Matsumotoa), M. Yoshiokaa), H. Horinaka, K. Wada,T. Matsuyama, H. Kobayakawa AIP Conference Proceedings, Volume 675, Issue 1, pp. 1068-1072 (2003)
SURFACE-PHOTOVOLTAGE EFFECT IN A GaAs-GaAsP SUPERLATTICE STUDIED WITH COMBINATION OF SYNCHROTRON RADIATION AND THE LASER Senku.Tanaka, Sam D. More, Kazutoshi Takahashi, Masao Kamada, Tomohiro Nishitani and Tsutomu Nakanishi Surface Review and Letters, Vol. 9, No. 21297-1301 (2002)
High Luminescence Polarization of InGaAs–AlGaAs Strained Layer Superlattice Fabricated as a Photocathode of Spin-Polarized Electron Source Tetsuya Matsuyama, Masayasu Mukai, Hiromichi Horinaka, Kenji Wada, Tsutomu Nakanishi, Shoji Okumi, Kazuaki Togawa, Tomohiro Nishitani and Toshio Baba Japanese Journal of Applied Physics, 40 (2001) pp. 6468-6472, Pt. 1, No. 11
Fabrication of Ultra-clean Copper Surface to Minimize Field Emission Dark Currents C. Suzuki, T. Nakanishi, S. Okumi, T. Gotou, K. Togawa, F. Furuta, K. Wada, T. Nishitani, M. Yamamoto, J. Watanabe, S. Kurahashi, K. Asano, H. Matsumoto, M. Yoshioka and H. Kobayakawa Nuclear Instruments and Methods in Physics Research A 462 p337-348 (2001)
Surface Photovoltage Effect on Clean and Negative Electron-affinity Surfaces of GaAs and its Superlattice S. Tanaka, S.D. More, T. Nishitani, K. Takahashi, T. Nakanishi and M. Kamada AIP Conference Proceedings, Volume 570, Issue 1, pp. 1000-1002 (2001)
Cesiumoxide-GaAs Interface and Layer Thickness in NEA Surface Formation S.D. More, Senku Tanaka, Shin-ichiro Tanaka, T. Nishitani, T. Nakanishi and M. Kamada AIP Conference Proceedings, Volume 570, Issue 1, pp. 916-919 (2001)
Fabrication of GaAs/GaAsP Superlattice Photocathode O. Watanabe, T. Nishitani, K. Togawa, Y. Takashima, T. Nakanishi, Y. Takeda and H. Kobayakawa AIP Conference Proceedings, Volume 570, Issue 1, pp. 1024-1026 (2001)
Development of Spin Polarized Electron Photocathodes: GaAs-GaAsP Superlattice and GaAs- AlGaAs Superlattice with DBR T. Nishitani, O. Watanabe, T. Nakanishi, S. Okumi, K. Togawa, C. Suzuki, F. Furuta, K. Wada, M. Yamamoto, J. Watanabe, S. Kurahashi, M. Miyamoto, H. Kobayakawa, Y. Takeda, T. Saka, K. Kato, A. K. Bakarov, A. S. Jaroshevich, H. E. Scheibler, A. I. Toropov and A. S. Terekhov AIP Conference Proceedings, Volume 570, Issue 1, pp. 1021-1023 (2001)
Atomic Hydrogen Cleaning of GaAs Photocathode with a Load-Lock System M.Yamamoto, K.Wada, T.Nakanishi, S.Okumi, K.Togawa, C.Suzuki, F.Furuta, T. Nishitani, J.Watanabe, S.Kurahashi and M.Miyamoto International Workshop on Polarized Electron Sources and Polarimeters (PES2000), AIP Conference Proceedings, Volume 570, Issue 1, pp. 1018-1020 (2001)
Test of Cesium Telluride Photocathode as a Feasibility Study on Polarized RF-gun F.Furuta, H.Sugiyama ,T.Nakanishi, S.Okumi, K. Togowa, C. Suzuki, K. Wada, M.Yamamoto, T. Nishitani, J.Watanabe, S.Kurahashi, M.Miyamoto, M. Kuwahara, R.Mizuno, T.Hirose, K.Kimura, H.Kobayakawa, Y.Takashima, M.Yoshioka and H.Matsumto International Workshop on Polarized Electron Sources and Polarimeters (PES2000), AIP Conference Proceedings, Volume 570, Issue 1, pp. 1015-1017 (2001)
Development of 200 keV Polarized Electron Gun K. Wada, M. Yamamoto, T. Nakanishi, S. Okumi, T. Gotoh, K. Togawa, C. Suzuki, F. Furuta, T. Nishitani, J. Watanabe, S. Kurahashi, M. Miyamoto, H. Matsumoto, Y. Takeuchi and M. Yoshioka International Workshop on Polarized Electron Sources and Polarimeters (PES2000), AIP Conference Proceedings, Volume 570, Issue 1, pp. 1012-1014 (2001)
Reduction of Field Emission Current from Stainless Steel and Copper Surface C. Suzuki, T. Nakanishi, S. Okumi, , T. Gotoh, K. Togawa, F. Furuta, K. Wada, T. Nishitani, M. Yamamoto, J. Watanabe, S. Kurahashi, H. Matsumoto, M. Yoshioka, K. Asano and H. Kobayakawa. International Workshop on Polarized Electron Sources and Polarimeters (PES2000), AIP Conference Proceedings, Volume 570, Issue 1, pp. 1009-1011 (2001)
Polarized Electron Source for Japan Linear Collider K. Togawa, T. Nakanishi, S. Okumi, C. Suzuki, F. Furuta, K. Wada, T. Nishitani, M. Yamamoto, H. Kobayakawa, Y. Takeda, Y. Takashima, H. Sugiyama, O. Watanabe, Y. Kurihara, H. Matsumoto, T. Omori, Y. Takeuchi, M. Yoshioka, H. Horinaka, K. Wada, T. Matsuyama, T. Saka, T. Baba and T. Kato International Workshop on Polarized Electron Sources and Polarimeters (PES2000), AIP Conference Proceedings, Volume 570, Issue 1, pp. 982-987 (2001)
Polarized electron source for a linear collider in Japan T. Nakanishi, K. Togawa, T. Baba, F. Furuta, H. Horinaka, T. Kato, Y. Kurihara, H. Matsumoto, T. Matsuyama, T. Nishitani, S. Okumi, T. Omori, T. Saka, C. Suzuki, Y. Takeuchi, K. Wada, M. Yamamoto and M. Yoshioka Nuclear Instruments and Methods in Physics Research A 455 (2000) p109-112
Production of Polarized Electron Beam with Sub-nanosecond Multi-bunch Structure from Superlattice Photocathode K. Togawa, T. Nakanishi, T. Baba, F. Furuta, H. Horinaka, Y. Kurihara, H. Matsumoto, T. Matsuyama, T. Nishitani, S. Okumi, T. Omori, C. Suzuki, Y. Takeuchi, K. Wada, K. Wada, M. Yamamoto and M. Yoshioka Nuclear Instruments and Methods in Physics Research Section A 455 pp. 118-122 (2000)
Polarized Electron Source for a Linear Collider in Japan T. Nakanishi, K. Togawa, T. Baba, F. Furuta, H. Horinaka, T. Kato, Y. Kurihara, H. Matsumoto, T. Matsuyama, T. Nishitani, S. Okumi, T. Omori, T. Saka, C. Suzuki, Y. Takeuchi, K. Wada, K. Wada, M. Yamamoto and M. Yoshioka Nuclear Instruments and Methods in Physics Research Section A Volume 455, Issue 1, pp. 109-112 (2000)

Conference List

Photoelectron Beams from GaN-type Semiconductors Bring Innovations in Semiconductor Inspections ISPlasma2025 / IC-PLANTS2025、March 3 - March 7, 2025、Chubu University, Aichi, Japan Tomohiro Nishitani
High-speed modulation of probe current using scanning electron microscope with photocathode technology SPIE Advanced Lithography + Patterning、February 23 - February 27, 2025、San Jose, California, US Tomohiro Nishitani,Daiki Sato
半導体フォトカソードによるパルス電子ビームを用いた深溝構造のSEM観測 The 8th Next Generation Electronic Packaging System Technology Reserch Consortium、November 15, 2024、Face-to-face and web-based events Yuta Arakawa
Digital Selective e-Beaming技術を用いたHARのトレンチ底のSEM撮像 EBAT・AM、May 27, 2024、Web-based event Tomohiro Nishitani
Photoelectron beam from semiconductor photocathodes leading to newinspection technologies他2件 SPIE Advanced Lithography + Patterning 2024、February 26 - 29, 2024、San Jose, California, US Tomohiro Nishitani,Daiki Sato
光電子ビームで微細領域の観測に新たな価値をもたらす GaN系半導体フォトカソード 次世代真空エレクトロニクス研究会第10回定例研究会、November 20, 2023、Face-to-face and web-based events Tomohiro Nishitani
GaN半導体による光電子ビームデバイス × ディープテックスタートアップ Consortium for GaN Research and Applications、September 6, 2023、Web-based event Tomohiro Nishitani
Photoelectron beam technology for SEM imaging with pixel-specific control of irradiation beam current他1件 SPIE Advanced Lithography + Patterning、February 26 - March 2, 2023、California, US Tomohiro Nishitani,Daiki Sato
半導体フォトカソードによる選択的電子ビーム照射技術を用いた電子顕微鏡像 Next Generation Lithography Research Committee、July 7-8, 2022、Web-based event Tomohiro Nishitani
Generation of higher than 1000 A/cm2 continuous wave electron beam emission from InGaN photocathode他3件 OPTICS & PHOTONICS International Congress 2022/LEDIA2022、May 31-June 3, 2022、New Orleans, US A. Koizumi, D. Sato, H. Shikano, T.Nishitani
Pulsed electron microscopes using photoelectron beam from GaN semiconductor photocathodes OPTICS & PHOTONICS International Congress 2022/LEDIA2022、April 21, 2022、Web-based event Tomohiro Nishitani
Selective scanning electron microscope by photo electron beam from GaN semiconductor photocathode EBAT・AM、March 16, 2022、Web-based event Tomohiro Nishitani
負電子親和力表面の半導体フォトカソードで挑む電子ビーム技術革新 Technical Committee on Electron Devices、December 9, 2021、Web-based event Tomohiro Nishitani
Multiple Electron-Beam Generation from InGaN Photocathode EIPBN2021,June1-4,2021,Online Daiki Sato
高輝度パルス電子源の開発 Kansai Branch of the Japanese Society of Microscopy、March 5, 2021、Onomichi Commercial Chamber Memorial Hall 2F Tomohiro Nishitani
GaN系半導体フォトカソードを用いた光電子ビームの実用とスタートアップ企業による事業化 Consortium for GaN Research and Applications、December 17, 2020、Web-based event Tomohiro Nishitani
半導体フォトカソード電子源を特徴とする電子ビーム検査技術, Innovative inspection technology opened by photo electron beam from III-V semiconductors Single-Nanometer Figuration and the Structure-Induced Property、October 26-27, 2020、Web-based event Tomohiro Nishitani, Yoshio Honda, Masaaki Araidai, Hiroshi Amano, Masao Tabuchi, Akihiro Narita, Hidehiro Yasuda, Fumitaro Ishikawa, Takashi Meguro, Atsushi Koizumi, Daiki Sato, Anna Honda